IRF840ALPBF Vishay, IRF840ALPBF Datasheet - Page 3
![MOSFET N-CH 500V 8A TO-262](/photos/5/47/54776/pkgto-262_sml.jpg)
IRF840ALPBF
Manufacturer Part Number
IRF840ALPBF
Description
MOSFET N-CH 500V 8A TO-262
Manufacturer
Vishay
Datasheet
1.IRF840ASPBF.pdf
(11 pages)
Specifications of IRF840ALPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ALPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 91066
100
100
0.1
0.1
10
10
1
1
4.0
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T = 150 C
J
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
J
1
6.0
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
7.0
J
DS
4.5V
10
= 50V
°
8.0
100
9.0
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
0.1
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I =
Fig 4. Normalized On-Resistance
D
7.4A
8.0
V
IRF840AS/LPbF
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
Vs. Temperature
0
1
20
40
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
www.vishay.com
4.5V
10
°
V
°
GS
=
10V
100
3