IRF840ALPBF Vishay, IRF840ALPBF Datasheet - Page 6
IRF840ALPBF
Manufacturer Part Number
IRF840ALPBF
Description
MOSFET N-CH 500V 8A TO-262
Manufacturer
Vishay
Datasheet
1.IRF840ASPBF.pdf
(11 pages)
Specifications of IRF840ALPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ALPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF840AS/LPbF
Document Number: 91066
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
10 V
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I A S
.3µF
D .U .T
0 .0 1 Ω
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
1200
1000
800
600
400
200
0
Fig 12d. Typical Drain-to-Source Voltage
25
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
Vs. Avalanche Current
Vs. Drain Current
J
75
100
TOP
BOTTOM
www.vishay.com
125
°
I D
3.6A
5.1A
8.0A
150
6