SI4434DY-T1-E3 Vishay, SI4434DY-T1-E3 Datasheet

MOSFET N-CH 250V 2.1A 8-SOIC

SI4434DY-T1-E3

Manufacturer Part Number
SI4434DY-T1-E3
Description
MOSFET N-CH 250V 2.1A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4434DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.155 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.1 A
Power Dissipation
1560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
162mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4434DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
SI4434DY-T1-E3
Manufacturer:
KAE
Quantity:
2 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
SI4434DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Price:
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
250
DS
(V)
S
S
S
G
1
2
3
4
0.162 at V
Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.155 at V
T op V iew
SO-8
Rr
DS(on)
J
a
= 150 °C)
GS
a
GS
(Ω)
= 6.0 V
8
7
6
5
= 10 V
N-Channel 250-V (D-S) MOSFET
D
D
D
D
a
a
A
I
= 25 °C, unless otherwise noted
D
3.0
2.9
Steady State
Steady State
L = 0.1 mH
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• PWM-Optimized TrenchFET
• 100 % R
• Avalanche Tested
• Primary Side Switch In:
Symbol
Symbol
T
R
R
J
Definition
- Telecom Power Supplies
- Distributed Power Architectures
- Miniature Power Modules
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
Typical
10 s
3.0
2.4
2.6
3.1
2.0
33
65
17
- 55 to 150
± 20
250
8.4
30
13
Steady State
G
®
Maximum
Power MOSFET
N-Channel MOSFET
1.56
2.1
1.7
1.3
1.0
40
80
21
Vishay Siliconix
D
S
Si4434DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4434DY-T1-E3 Summary of contents

Page 1

... iew Ordering Information: Si4434DY-T1-E3 (Lead (Pb)-free) Si4434DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4434DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) DS Source-Drain Diode Forward Voltage Document Number: 72562 S09-0322-Rev. D, 02-Mar-09 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si4434DY Vishay Siliconix C iss C oss 500 C rss 100 150 V - Drain-to-Source Voltage (V) DS Capacitance 2 3 2.0 1.5 1.0 0.5 ...

Page 4

... Si4434DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.5 I 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 Limited DS(on 0 °C C 0.01 Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72562. Document Number: 72562 S09-0322-Rev. D, 02-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4434DY Vishay Siliconix 10 100 1000 www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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