IRF640STRRPBF Vishay, IRF640STRRPBF Datasheet
IRF640STRRPBF
Specifications of IRF640STRRPBF
Related parts for IRF640STRRPBF
IRF640STRRPBF Summary of contents
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... 100 ° ° °C A for Ω (see fig. 12 ≤ 150 ° Vishay Siliconix device design, low on-resistance 2 PAK is suitable PAK (TO-263) I PAK (TO-262) a IRF640STRRPbF IRF640LPbF a SiHF640STR-E3 SiHF640L-E3 a IRF640STRR IRF640L a SiHF640STR SiHF640L SYMBOL LIMIT V 200 DS V ± 1.0 E 580 3.1 ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, Steady-State) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L = 25 °C Fig Typical Transfer Characteristics J = 175 °C Fig Normalized On-Resistance vs. Temperature J Vishay Siliconix www.vishay.com 3 ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91037 S-81241-Rev. A, 07-Jul-08 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91037 S-81241-Rev. A, 07-Jul-08 IRF640S, IRF640L, SiHF640S, SiHF640L 15 V Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91037 S-81241-Rev ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91037. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...