SI7434DP-T1-GE3 Vishay, SI7434DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7434DP-T1-GE3
• Description: MOSFET N-CH 250V 2.3A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7434DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 162mohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7434DP-T1-GE3TR

Si7434DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
- 0.5
- 1.0
- 1.5
2
1
1.0
0.5
0.0
10
- 50
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
10
Threshold Voltage
T
-3
J
25
- Temperature (°C)
50
0.001
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
I
100
D
0.1
10
= 250 µA
1
0.1
75
10
* V
R
Limited by
-2
DS(on)
Safe Operating Area, Junction-to-Case
GS
100
Single Pulse
> minimum V
*
V
DS
125
1
Single Pulse
T
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (s)
C
= 25 °C
150
10
GS
-1
at which R
10
DS(on)
100
is specified
1
100
80
60
40
20
0
0.001
1 ms
10 ms
100 ms
1 s
10 s
DC
1000
Single Pulse Power, Junction-to-Ambient
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.01
P
DM
JM
-
T
t
A
1
= P
t
Time (s)
2
DM
S09-0271-Rev. C, 16-Feb-09
0.1
Z
thJA
Document Number: 72579
thJA
100
t
t
1
2
(t)
= 68 °C/W
1
600
10