IRFD9210 Vishay, IRFD9210 Datasheet - Page 3
![MOSFET P-CH 200V 400MA 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRFD9210
Manufacturer Part Number
IRFD9210
Description
MOSFET P-CH 200V 400MA 4-DIP
Manufacturer
Vishay
Datasheet
1.IRFD9210PBF.pdf
(8 pages)
Specifications of IRFD9210
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 240mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Transistor Polarity
P Channel
Continuous Drain Current Id
-400mA
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9210
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFD9210
Manufacturer:
OKISEMICONDUCTOR
Quantity:
3 596
Part Number:
IRFD9210
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFD9210PBF
Manufacturer:
AD
Quantity:
5 200
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
T
T
A
A
= 25 °C
= 150 °C
A
A
= 150 °C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 3 - Typical Transfer Characteristics
IRFD9210, SiHFD9210
Vishay Siliconix
www.vishay.com
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