IRFD9210 Vishay, IRFD9210 Datasheet - Page 7
![MOSFET P-CH 200V 400MA 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRFD9210
Manufacturer Part Number
IRFD9210
Description
MOSFET P-CH 200V 400MA 4-DIP
Manufacturer
Vishay
Datasheet
1.IRFD9210PBF.pdf
(8 pages)
Specifications of IRFD9210
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 240mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Transistor Polarity
P Channel
Continuous Drain Current Id
-400mA
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9210
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFD9210
Manufacturer:
OKISEMICONDUCTOR
Quantity:
3 596
Part Number:
IRFD9210
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFD9210PBF
Manufacturer:
AD
Quantity:
5 200
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91140.
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
SD
Diode recovery
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
SD
V
IRFD9210, SiHFD9210
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7