IRF624 Vishay, IRF624 Datasheet - Page 3
![MOSFET N-CH 250V 4.4A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF624
Manufacturer Part Number
IRF624
Description
MOSFET N-CH 250V 4.4A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF624.pdf
(8 pages)
Specifications of IRF624
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF624
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF624A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF624A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
IRF624B
Manufacturer:
FSC
Quantity:
2 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91029
S-82998-Rev. A, 12-Jan-09
91029_02
91029_01
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
1
0
10
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS ,
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
150 °C
25 °C
1
1
C
4.5 V
C
4.5 V
= 150 °C
= 25 °C
91029_03
91029_04
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
Fig. 4 - Normalized On-Resistance vs. Temperature
-1
1
0
- 60 - 40 - 20 0
4
I
V
D
GS
150
Fig. 3 - Typical Transfer Characteristics
= 4.4 A
= 10 V
V
°
5
C
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
IRF624, SiHF624
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3