IRF730A Vishay, IRF730A Datasheet - Page 3

• Manufacturer Part Number: IRF730A
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91045
S-83000-Rev. A, 19-Jan-09
91045_01
91045_02
10
10
10
0.1
10
0.1
10
10
-2
1
-2
2
1
2
0.1
0.1
Top
Bottom
Top
Bottom
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
10
10
C
C
=
=
25 °C
150 °C
4.5 V
4.5 V
10
10
2
2
91045_03
91045_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
2
4.0
- 60 - 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 5.5 A
= 10 V
5.0
V
GS ,
T
T
J ,
J
IRF730A, SiHF730A
= 150
Junction Temperature (°C)
Gate-to-Source Voltage (V)
6.0
T
20 40 60 80 100 120 140 160
J
°
C
= 25
7.0
°
C
Vishay Siliconix
20 µs Pulse Width
V
8.0
DS
=
50 V
9.0
www.vishay.com
10.0
3