IRF730A Vishay, IRF730A Datasheet - Page 5

• Manufacturer Part Number: IRF730A
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730A

Document Number: 91045
S-83000-Rev. A, 19-Jan-09
91045_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
91045_11
R
20 V
G
10
V
0.1
50
DS
10
T
-2
1
C
10
t
, Case Temperature (°C)
p
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
I
75
AS
D.U.T.
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01 Ω
L
100
Single Pulse
(Thermal Response)
10
-4
15 V
125
Driver
+
- V
150
A
DD
t
1
, Rectangular Pulse Duration (s)
10
-3
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF730A, SiHF730A
DS
t
r
0.1
t
p
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
D
x Z
t
t
1
d(off)
V
1
thJC
/t
DS
2
t
+ T
2
t
f
C
1
+
-
www.vishay.com
V
DD
5