IRF540 Vishay, IRF540 Datasheet - Page 8

• Manufacturer Part Number: IRF540
• Description: MOSFET N-CH 100V 28A TO-220AB
• Manufacturer: Vishay

Specifications of IRF540

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.077 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF540; IRF540IR

TO-220AB
Document Number: 71195
Revison: 01-Nov-10
1
e(1)
E
2
e
3
b
* M
b(1)
Ø P
C
A
J(1)
F
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
DIM.
H(1)
b(1)
e(1)
J(1)
L(1)
Ø P
D
Q
A
b
c
E
e
F
L
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
2.41
3.32
3.54
2.60
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
www.vishay.com
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
1