IRF644 Vishay, IRF644 Datasheet

MOSFET N-CH 250V 14A TO-220AB

IRF644

Manufacturer Part Number
IRF644
Description
MOSFET N-CH 250V 14A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF644

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
280mohm
Thermal Resistance
1°C/W
Current Rating
14A
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRF644

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF644
Manufacturer:
IR
Quantity:
9 224
Price:
Company:
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Part Number:
IRF644A
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF644B
Manufacturer:
FAIRCHILD
Quantity:
4 250
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF644B_FP001
Manufacturer:
FAIRCHILD
Quantity:
5 288
Price:
Company:
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Part Number:
IRF644N
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF644PBF
Manufacturer:
IR
Quantity:
3 000
Price:
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91039
S-81241-Rev. B, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 14 A, dI/dt ≤ 150 A/µs, V
= 50 V, starting T
(Ω)
TO-220
G
a
D
J
S
= 25 °C, L = 4.5 mH, R
c
a
a
DD
b
V
GS
≤ V
= 10 V
G
DS
N-Channel MOSFET
, T
J
Single
≤ 150 °C.
250
68
11
35
G
D
S
= 25 Ω, I
C
Power MOSFET
0.28
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 14 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF644PbF
SiHF644-E3
IRF644
SiHF644
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 150
IRF644, SiHF644
LIMIT
300
± 20
250
550
125
8.5
1.0
4.8
1.1
14
56
14
13
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF644 Summary of contents

Page 1

... TO-220 IRF644PbF SiHF644-E3 IRF644 SiHF644 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRF644, SiHF644 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 250 DS V ± 8 1.0 E 550 ...

Page 2

... IRF644, SiHF644 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91039 S-81241-Rev. B, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF644, SiHF644 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRF644, SiHF644 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91039 S-81241-Rev. B, 07-Jul-08 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91039 S-81241-Rev. B, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRF644, SiHF644 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRF644, SiHF644 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91039 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF644, SiHF644 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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