IRF644 Vishay, IRF644 Datasheet - Page 2

• Manufacturer Part Number: IRF644
• Description: MOSFET N-CH 250V 14A TO-220AB
• Manufacturer: Vishay

Specifications of IRF644

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 250V
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 280mohm
• Thermal Resistance: 1°C/W
• Current Rating: 14A
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF644

IRF644, SiHF644
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
I
I
C
R
V
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
L
t
DS
I
SM
t
thCS
t
t
on
thJA
thJC
DS
oss
SD
iss
rss
S
rr
fs
gd
gs
r
f
D
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
R
GS
GS
= 25 °C, I
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
G
Reference to 25 °C, I
J
= 10 V
= 10 V
= 9.1 Ω, R
= 200 V, V
= 25 °C, I
V
V
V
V
V
TYP.
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
= 125 V, I
= 250 V, V
F
= V
= 50 V, I
= 0 V, I
V
V
= 7.9 A, dI/dt = 100 A/µs
V
GS
DS
S
D
GS
GS
I
GS
D
= 14 A, V
= 8.7 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 7.9 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
= 8.4 A
D
= 7.9 A,
= 8.4 A
D
= 0 V
GS
= 1 mA
J
G
G
DS
= 125 °C
= 0 V
b
= 200 V,
b
MAX.
D
S
b
S
D
1.0
b
62
b
-
b
MIN.
250
2.0
6.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91039
S-81241-Rev. B, 07-Jul-08
TYP.
1300
0.34
330
250
4.5
7.5
2.3
85
11
24
53
49
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.28
S
250
500
4.0
1.8
4.6
25
68
11
35
14
56
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V