IRFI9540G Vishay, IRFI9540G Datasheet
IRFI9540G
Specifications of IRFI9540G
Available stocks
Related parts for IRFI9540G
IRFI9540G Summary of contents
Page 1
... TO-220 FULLPAK IRFI9540GPbF SiHFI9540G-E3 IRFI9540G SiHFI9540G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 175 ° IRFI9540G, SiHFI9540G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V - 100 DS V ± 7 0.32 E 600 ...
Page 2
... IRFI9540G, SiHFI9540G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91164 S09-0011-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRFI9540G, SiHFI9540G Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRFI9540G, SiHFI9540G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91164 S09-0011-Rev. A, 19-Jan-09 ...
Page 5
... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91164 S09-0011-Rev. A, 19-Jan-09 IRFI9540G, SiHFI9540G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit t d(on Fig. 10b - Switching Time Waveforms ...
Page 6
... IRFI9540G, SiHFI9540G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91164 ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices Fig For P-Channel IRFI9540G, SiHFI9540G Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...