IRFI9540G Vishay, IRFI9540G Datasheet - Page 7
![MOSFET P-CH 100V 11A TO220FP](/photos/13/92/139247/irfi530npbf_sml.jpg)
IRFI9540G
Manufacturer Part Number
IRFI9540G
Description
MOSFET P-CH 100V 11A TO220FP
Manufacturer
Vishay
Datasheet
1.IRFI9540G.pdf
(8 pages)
Specifications of IRFI9540G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
86 ns
Minimum Operating Temperature
- 55 C
Rise Time
110 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFI9540G
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFI9540G
Manufacturer:
IR
Quantity:
5 000
Company:
Part Number:
IRFI9540G
Manufacturer:
IR
Quantity:
12 500
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91164.
Document Number: 91164
S09-0011-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
G
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
Fig. 14 - For P-Channel
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
IRFI9540G, SiHFI9540G
V
V
I
SD
GS
DD
= - 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7