IRFB17N50L Vishay, IRFB17N50L Datasheet
![MOSFET N-CH 500V 16A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB17N50L
Manufacturer Part Number
IRFB17N50L
Description
MOSFET N-CH 500V 16A TO-220AB
Manufacturer
Vishay
Specifications of IRFB17N50L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2760pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.32 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
220 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFB17N50L
Q1082842
Q1082842
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB17N50L
Manufacturer:
IR
Quantity:
15 000
Part Number:
IRFB17N50L
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB17N50LPBF
Manufacturer:
ST
Quantity:
6 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 16 A, dI/dt ≤ 347 A/µs, V
(Ω)
TO-220
J
= 25 °C, L = 3.0 mH, R
G
D
a
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
, T
G
J
Single
N-Channel MOSFET
≤ 150 °C.
500
130
33
59
AS
= 16 A (see fig. 12).
C
D
S
Power MOSFET
= 25 °C, unless otherwise noted
V
0.28
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Low T
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
Requirement
Ruggedness
Avalanche Voltage and Current
IRFB17N50L, SiHFB17N50L
rr
and Soft Diode Recovery
SYMBOL
Characterized
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
results in Simple Drive
- 55 to + 150
Capacitance
LIMIT
300
± 30
500
390
220
1.8
1.1
16
11
64
16
22
13
10
d
Vishay Siliconix
www.vishay.com
and
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1