IRFB17N50L Vishay, IRFB17N50L Datasheet

MOSFET N-CH 500V 16A TO-220AB

IRFB17N50L

Manufacturer Part Number

IRFB17N50L

Description

MOSFET N-CH 500V 16A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRFB17N50L.pdf (8 pages)

2.IRFB17N50L.pdf (9 pages)

3.IRFB17N50L.pdf (9 pages)

Specifications of IRFB17N50L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

320 mOhm @ 9.9A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

2760pF @ 25V

Power - Max

220W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.32 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

16 A

Power Dissipation

220 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFB17N50L
Q1082842

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB17N50L

Manufacturer:

IR

Quantity:

15 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRFB17N50L

Manufacturer:

IR

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB17N50LPBF

Manufacturer:

ST

Quantity:

6 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB17N50LPBF

Quantity:

6 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB17N50LPBF

Quantity:

12 007

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB17N50LPBF

Quantity:

70 000

Current page: 1 of 8
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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91098

S-81263-Rev. A, 21-Jul-08

PRODUCT SUMMARY

V

R

Q

Q

Q

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS

DS(on)

g

gs

gd

SD

(Max.) (nC)

(nC)

(nC)

(V)

≤ 16 A, dI/dt ≤ 347 A/µs, V

(Ω)

TO-220

J

= 25 °C, L = 3.0 mH, R

G

D

a

S

c

a

a

DD

b

V

GS

≤ V

G

= 10 V

= 25 Ω, I

DS

, T

G

J

Single

N-Channel MOSFET

≤ 150 °C.

500

130

33

59

AS

= 16 A (see fig. 12).

C

D

S

Power MOSFET

= 25 °C, unless otherwise noted

V

0.28

GS

6-32 or M3 screw

at 10 V

T

for 10 s

C

= 25 °C

T

T

C

C

TO-220

IRFB17N50LPbF

SiHFB17N50L-E3

IRFB17N50L

SiHFB17N50L

= 100 °C

= 25 °C

FEATURES

• Low Gate Charge Q

• Improved Gate, Avalanche and Dynamic dV/dt

• Fully

• Low T

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• ZVS and High Frequency Circuit

• PWM Inverters

Requirement

Ruggedness

Avalanche Voltage and Current

IRFB17N50L, SiHFB17N50L

rr

and Soft Diode Recovery

SYMBOL

Characterized

T

dV/dt

J

V

V

E

E

I

I

P

, T

I

DM

AR

DS

GS

AS

AR

D

D

stg

g

results in Simple Drive

- 55 to + 150

Capacitance

LIMIT

300

± 30

500

390

220

1.8

1.1

16

11

64

16

22

13

10

d

Vishay Siliconix

www.vishay.com

and

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

mJ

mJ

°C

W

V

A

A

Available

1

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