IRFB17N50L Vishay, IRFB17N50L Datasheet - Page 4

• Manufacturer Part Number: IRFB17N50L
• Description: MOSFET N-CH 500V 16A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB17N50L; Q1082842

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
www.vishay.com
4
1 000 000
10 000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
20
16
12
8
4
0
0
1
I D = 16 A
30
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
V GS = 0 V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
60
V DS = 400 V
V DS = 250 V
V DS = 100 V
C oss
C rss
C iss
90
100
Shorted
f = 1 MHz
120
150
1000
1000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
10
100
1
0.1
10
10
1
T C = 25 °C
T J = 150 °C
Single Pulse
0.2
Fig. 8 - Maximum Safe Operating Area
OPERATING IN THIS AREA LIMITED
T J = 150 °C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
0.6
100
BY R DS(on)
0.9
T J = 25 °C
100 μs
10 ms
10 μs
1 ms
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
1000
1.3
V GS = 0 V
10000
1.6