PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 5

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09334
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovery charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
T
T
T
T
T
T
T
= 15 A; V
= 10 A; dI
= 250 A; V
= 1 mA; V
= 20 A; V
Rev. 01 — 6 March 2002
j
j
j
j
j
j
j
= 30 V; V
= 20 V; V
= 10 V; I
= 4.5 V; I
= 15 V; I
= 0 V; V
= 15 V; R
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 25 C
GS
DD
S
DS
DS
D
D
/dt = 100 A/ s; V
D
GS
L
GS
= 15 A
= 20 A
= 0 V
= 15 V; V
DS
= V
= 13 A
= 25 V; f = 1 MHz
= 15 ; V
= 0 V
= 0 V
= 0 V
GS
GS
GS
= 4.5 V
= 10 V; R
GS
= 0 V
G
= 6
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN005-30K
Min
30
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
4.4
6.6
60
34
15
14
3100 -
605
405
18
16
65
45
0.81
35
20
Max
-
3
-
3.4
1
0.5
100
5.5
8
-
-
-
-
-
-
-
-
-
-
1.3
-
-
5 of 12
Unit
V
V
V
V
mA
nA
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A