PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet - Page 6

• Manufacturer Part Number: PSMN005-30K,518
• Description: MOSFET N-CH 30V 20A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-30K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056843518; PSMN005-30K /T3; PSMN005-30K /T3

Philips Semiconductors
9397 750 09334
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
R DSon
j
j
= 25 C
= 25 C
0.016
0.012
0.008
0.004
( )
0.02
function of drain-source voltage; typical values.
of drain current; typical values.
(A)
I D
60
40
20
0
0
0
0
T j = 25 ºC
0.2
10 V
20
4.5 V
0.4
0.6
V GS = 3.8 V
40
V GS = 3 V
0.8
I D (A)
V DS (V)
4 V
3.8 V
3.6 V
3.4 V
3.2 V
4.5 V
10 V
03ah06
03ah07
4 V
60
1
Rev. 01 — 6 March 2002
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
= 25 C and 175 C; V
=
a
function of gate-source voltage; typical values.
factor as a function of junction temperature.
(A)
1.6
1.2
0.8
0.4
I D
60
40
20
---------------------------- -
R
0
2
0
-60
DSon 25 C
0
R
V DS > I D x R DSon
DSon
1
0
T j = 150 ºC
2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
PSMN005-30K
60
> I
D
3
x R
25 ºC
DSon
120
4
T j (ºC)
V GS (V)
03ah08
03af18
180
5
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