BUK7608-40B,118 NXP Semiconductors, BUK7608-40B,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7608-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7608-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 101 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057699118::BUK7608-40B /T3::BUK7608-40B /T3

NXP Semiconductors
BUK7608-40B_4
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
DSon
(V)
14
12
10
5
4
3
2
1
0
8
6
4
−60
junction temperature
of gate-source voltage; typical values
Gate-source threshold voltage as a function of
5
0
10
60
max
min
typ
15
120
V
GS
003aab852
T
003aac075
j
(V)
(°C)
Rev. 04 — 24 September 2008
160
20
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
a
D
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
N-channel TrenchMOS standard level FET
0
2
min
BUK7608-40B
60
typ
4
120
max
V
© NXP B.V. 2008. All rights reserved.
GS
003aab853
003aab851
T
j
(V)
(°C)
180
6
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