PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 10
![MOSFET N-CH 100V 75A TO220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN015-100P,127
Manufacturer Part Number
PSMN015-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-100P127.pdf
(13 pages)
Specifications of PSMN015-100P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055640127::PSMN015-100P::PSMN015-100P
Philips Semiconductors
Fig 15. SOT404 (D
9397 750 12543
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2
D
-PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 05 — 14 January 2004
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
N-channel TrenchMOS™ Standard level FET
PSMN015-100P/100B
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
99-06-25
01-02-12
SOT404
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