PSMN030-150B,118 NXP Semiconductors, PSMN030-150B,118 Datasheet - Page 3
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PSMN030-150B,118
Manufacturer Part Number
PSMN030-150B,118
Description
MOSFET N-CH 150V 55.5A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN030-150B118.pdf
(12 pages)
Specifications of PSMN030-150B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
98nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
55.5A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55.5 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056598118::PSMN030-150B /T3::PSMN030-150B /T3
NXP Semiconductors
PSMN030-150B
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
DS(on)
= 25 °C; I
= V
50
DS
/ I
10
DM
D.C.
D
is single pulse
100
10
2
150
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
V
All information provided in this document is subject to legal disclaimers.
DS
T
mb
003aaf138
003aaf140
(V)
(°C)
Rev. 02 — 13 December 2010
200
10
3
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
Fig 4.
(%)
l
(A)
I
AS
D
100
10
80
60
40
20
10
0
1
2
10
function of mounting base temperature
current as a function of avalanche period
Normalized continuous drain current as a
unclamped inductive load
Single-shot avalanche rating; avalanche
0
−3
T
j
prior to avalanche = 150 °C
10
50
−2
PSMN030-150B
10
100
−1
150
1
© NXP B.V. 2010. All rights reserved.
T
t
AV
mb
003aaf139
003aaf155
25 °C
(ms)
(°C)
200
10
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