BUK7107-55AIE,118 NXP Semiconductors, BUK7107-55AIE,118 Datasheet

BUK7107-55AIE,118

Manufacturer Part Number

BUK7107-55AIE,118

Description

MOSFET N-CH 55V 75A D2PAK

Manufacturer

NXP Semiconductors

Datasheet

1.BUK7907-55AIE127.pdf (15 pages)

Specifications of BUK7107-55AIE,118

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Current Sensing

Rds On (max) @ Id, Vgs

7 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

116nC @ 10V

Input Capacitance (ciss) @ Vds

4500pF @ 25V

Power - Max

272W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (4 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.007 Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

75 A

Power Dissipation

272 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

934057272118
BUK7107-55AIE /T3
BUK7107-55AIE /T3

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1. Product proﬁle

2. Pinning information

Table 1:

Description

gate (g)

drain (d)

Kelvin source

source (s)

mounting base;

connected to drain (d)

sense

Pinning - SOT426 and SOT263B, simpliﬁed outline and symbol

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS

current sensing and diodes for ESD protection.

Product availability:

BUK7107-55AIE in SOT426 (D

BUK7907-55AIE in SOT263B (TO-220AB).

Simpliﬁed outline

BUK71/7907-55AIE

TrenchPLUS standard level FET

Rev. 01 — 12 August 2002

Integrated current sensor

ESD protection

Variable Valve Timing for engines

Front view

1 2

140 A

55 V

SOT426 (D

-PAK)

MBK127

-PAK)

SOT263B (TO-220AB)

Q101 compliant

Standard level compatible.

Electrical Power Assisted Steering.

DSon

MBL263

sense

= 5.8 m (typ)

= 500 (typ).

Symbol

MBL368

I sense

Product data

Kelvin source

Related parts for BUK7107-55AIE,118

BUK7107-55AIE,118 Summary of contents

Page 1

... Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D BUK7907-55AIE in SOT263B (TO-220AB). 1.2 Features Integrated current sensor ESD protection 1 ...

Page 2

Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGS V gate-source voltage (DC drain current (DC) ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) SOT263B SOT426 R thermal resistance from junction to th(j-mb) mounting base 4.1 Transient thermal impedance ...

Page 5

Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS V gate-source breakdown (BR)GSS voltage ...

Page 6

Philips Semiconductors Table 4: Characteristics …continued unless otherwise speciﬁed. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 09877 Product data BUK71/7907-55AIE Conditions ...

Page 7

Philips Semiconductors 400 8.5 (A) 20 300 200 100 300 Fig 5. Output characteristics: drain current as a function of drain-source voltage; ...

Page 8

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 9

Philips Semiconductors 120 I D (A) 100 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 600 sense ...

Page 10

Philips Semiconductors 6. Package outline Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT b c 4.50 1.40 0.85 0.64 ...

Page 11

Philips Semiconductors Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT 4.5 1.39 0.85 0.7 15.8 mm 4.1 1.27 0.70 0.4 15.2 Notes ...

Page 12

Philips Semiconductors 7. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 19. Reﬂow soldering footprint for SOT426. 9397 750 09877 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 13

Philips Semiconductors 8. Revision history Table 5: Revision history Rev Date CPCN Description 01 20020812 - Product data; initial version 9397 750 09877 Product data BUK71/7907-55AIE Rev. 01 — 12 August 2002 TrenchPLUS standard level FET © Koninklijke Philips Electronics ...

Page 14

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualiﬁcation Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 15

Philips Semiconductors Contents 1 Product proﬁ 1.1 Description . . . . . ...

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