BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet

MOSFET N-CH 55V 75A D2PAK

BUK7107-55ATE,118

Manufacturer Part Number
BUK7107-55ATE,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7107-55ATE,118

Package / Case
D²Pak, TO-263 (4 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
272000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057271118
BUK7107-55ATE /T3
BUK7107-55ATE /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
Table 1.
[1]
Symbol Parameter
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Current is limited by power dissipation chip rating
BUK7107-55ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 19 February 2009
drain-source voltage T
drain current
total power
dissipation
drain-source
on-state resistance
non-repetitive
drain-source
avalanche energy
Quick reference
Conditions
V
see
T
V
T
I
R
T
D
j
mb
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 68 A; V
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
2; see
sup
j
D
≤ 175 °C
mb
GS
= 50 A;
≤ 55 V;
= 25 °C;
= 10 V;
Figure 1
Figure
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Fan control
Variable Valve Timing for engines
3;
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
5.8
-
Max
55
140
272
7
460
Unit
V
A
W
mΩ
mJ

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BUK7107-55ATE,118 Summary of contents

Page 1

... BUK7107-55ATE N-channel TrenchPLUS standard level FET Rev. 02 — 19 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... BUK7107-55ATE D2PAK plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 19 February 2009 BUK7107-55ATE Graphic symbol mbl317 Version SOT426 © NXP B.V. 2009. All rights reserved ...

Page 3

... Figure 1 mb continuous = 5 ms; δ = 0.01 pulsed 250 µ °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 19 February 2009 BUK7107-55ATE Min Max - [1] - 140 [ 560 - 272 - -100 100 -55 175 -55 ...

Page 4

... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature DC 10 Rev. 02 — 19 February 2009 BUK7107-55ATE 03ni63 Capped at 75A due to package 50 100 150 200 T mb (°C) 03nf55 μs 100 μ 100 (V) © NXP B.V. 2009. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions mounted on a PCB; minimum footprint see Figure 4 −4 −3 − Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit - 0.55 K/W 03ni29 t p δ ...

Page 6

... Figure 250 µ ° 250 µA; T < 175 °C; T > -55 ° 125 µA < I < 250 µ ° see Figure MHz °C; see Figure 1.2 Ω Ω R G(ext) Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit 4 0.1 10 µ 250 µ 1000 ...

Page 7

... N-channel TrenchPLUS standard level FET Conditions from upper edge of drain mounting base to center of die from source lead to source bond pad ° see Figure /dt = -100 A/µ - Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit - 2 7 0.85 1 200 - nC © NXP B.V. 2009. All rights reserved. ...

Page 8

... I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET 03ni66 (V) 03ne89 0 60 120 ( ° © NXP B.V. 2009. All rights reserved. 20 180 ...

Page 9

... Fig 10. Sub-threshold drain current as a function of gate-source voltage 8000 03ni68 C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 19 February 2009 BUK7107-55ATE 03aa35 min typ max (V) GS 03ni69 C iss C oss C rss ...

Page 10

... S F (mV/K) −1.60 −1.50 −1.40 150 200 645 T (°C) j Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET 03nf25 (nC) 03ne85 max typ min 655 665 V (mV) F © NXP B.V. 2009. All rights reserved. ...

Page 11

... Fig 17. Reverse diode current as a function of reverse diode voltage; typical values BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.2 0.4 0.6 0.8 Rev. 02 — 19 February 2009 BUK7107-55ATE 03ni72 1 (V) © NXP B.V. 2009. All rights reserved ...

Page 12

... E e max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. ...

Page 13

... Legal texts have been adapted to the new company name where appropriate. BUK7107_55ATE-01 20020729 (9397 750 09875) BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 19 February 2009 BUK7107-55ATE Supersedes BUK7107_55ATE-01 - © NXP B.V. 2009. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 19 February 2009 BUK7107-55ATE © NXP B.V. 2009. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 — 19 February 2009 Document identifier: BUK7107-55ATE_2 All rights reserved. ...

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