BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 5
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BUK7107-55ATE,118
Manufacturer Part Number
BUK7107-55ATE,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7107-55ATE118.pdf
(15 pages)
Specifications of BUK7107-55ATE,118
Package / Case
D²Pak, TO-263 (4 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
7 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
272000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057271118
BUK7107-55ATE /T3
BUK7107-55ATE /T3
BUK7107-55ATE /T3
BUK7107-55ATE /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7107-55ATE_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
−5
Conditions
mounted on a PCB; minimum footprint
see
10
−4
Figure 4
Rev. 02 — 19 February 2009
10
−3
10
−2
N-channel TrenchPLUS standard level FET
10
−1
BUK7107-55ATE
Min
-
-
P
1
Typ
50
-
t
p
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
Max
-
0.55
δ =
03ni29
t
T
t
p
10
Unit
K/W
K/W
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