BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet - Page 5

• Manufacturer Part Number: BUK7107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7107-55ATE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057271118; BUK7107-55ATE /T3; BUK7107-55ATE /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7107-55ATE_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
−5
Conditions
mounted on a PCB; minimum footprint
see
10
−4
Figure 4
Rev. 02 — 19 February 2009
10
−3
10
−2
N-channel TrenchPLUS standard level FET
10
−1
BUK7107-55ATE
Min
-
-
P
1
Typ
50
-
t
p
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
Max
-
0.55
δ =
03ni29
t
T
t
p
10
Unit
K/W
K/W
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