IRLML9303TRPBF International Rectifier, IRLML9303TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLML9303TRPBF
• Description: MOSFET P-CH 30V 2.3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML9303TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 165 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML9303TRPBF; IRLML9303TRPBFTR

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0.01
100
100
0.1
0.1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
10
1
1
0.1
1
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 150°C
-2.5V
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
2
1
3
T J = 25°C
V DS = -15V
≤60µs PULSE WIDTH
4
10
5
TOP
BOTTOM
6
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
100
7
0.01
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
10
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
≤ 60µs PULSE WIDTH
Tj = 150°C
I D = -2.3A
V GS = -10V
-2.5V
-V DS , Drain-to-Source Voltage (V)
vs. Temperature
T J , Junction Temperature (°C)
1
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
100
3