IRLML9303TRPBF International Rectifier, IRLML9303TRPBF Datasheet - Page 3
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IRLML9303TRPBF
Manufacturer Part Number
IRLML9303TRPBF
Description
MOSFET P-CH 30V 2.3A SOT-23-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML9303TRPBF.pdf
(10 pages)
Specifications of IRLML9303TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
165 mOhm @ 2.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
2nC @ 4.5V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
270 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.25 W
Mounting Style
SMD/SMT
Gate Charge Qg
2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML9303TRPBF
IRLML9303TRPBFTR
IRLML9303TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML9303TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
100
0.1
0.1
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
10
1
1
0.1
1
≤ 60µs PULSE WIDTH
Tj = 25°C
T J = 150°C
-2.5V
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
2
1
3
T J = 25°C
V DS = -15V
≤60µs PULSE WIDTH
4
10
5
TOP
BOTTOM
6
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
100
7
0.01
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
10
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
≤ 60µs PULSE WIDTH
Tj = 150°C
I D = -2.3A
V GS = -10V
-2.5V
-V DS , Drain-to-Source Voltage (V)
vs. Temperature
T J , Junction Temperature (°C)
1
10
TOP
BOTTOM
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
100
3