IRLML9303TRPBF International Rectifier, IRLML9303TRPBF Datasheet - Page 6
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IRLML9303TRPBF
Manufacturer Part Number
IRLML9303TRPBF
Description
MOSFET P-CH 30V 2.3A SOT-23-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML9303TRPBF.pdf
(10 pages)
Specifications of IRLML9303TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
165 mOhm @ 2.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
2nC @ 4.5V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
270 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.25 W
Mounting Style
SMD/SMT
Gate Charge Qg
2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML9303TRPBF
IRLML9303TRPBFTR
IRLML9303TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML9303TRPBF
Manufacturer:
IR
Quantity:
20 000
Id
6
500
400
300
200
100
Fig 12. Typical On-Resistance vs.
Vgs
Fig 14a. Gate Charge Waveform
0
2
4
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
Qgodr
6
8
10
Qgd
12
T J = 25°C
T J = 125°C
Qgs2
14
I D = -2.3A
Vgs(th)
16
Vds
Qgs1
18
20
0
600
500
400
300
200
100
0
Fig 13. Typical On-Resistance vs.
Fig 14b. Gate Charge Test Circuit
0
20K
1K
Drain Current
5
-I D , Drain Current (A)
S
S
Vgs = -4.5V
DUT
10
L
Vgs = -10V
www.irf.com
15
VCC
20