IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet

MOSFET P-CH 12V 4.3A SOT-23

IRLML6401TRPBF

Manufacturer Part Number
IRLML6401TRPBF
Description
MOSFET P-CH 12V 4.3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRLML6401TRPBF.pdf (8 pages)
2.IRLML6401TRPBF.pdf (4 pages)

Specifications of IRLML6401TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
P
Current, Drain
-4.3 A
Gate Charge, Total
10 nC
Package Type
Micro3
Polarization
P-Channel
Power Dissipation
1.3 W
Resistance, Drain To Source On
0.05 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
250 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
8.6 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 4.3 A
Mounting Style
SMD/SMT
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6401PBFTR

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Price
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Thermal Resistance
l
l
l
l
l
l
l
l
l
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3™, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
V
I
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I
P
P
E
V
T
R
www.irf.com
D
D
DM
AS
GS
J,
DS
D
D
θJA
@ T
@ T
1.8V Gate Rated
@T
@T
T
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
Halogen-Free
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambientƒ
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
* 
®

Typ.
75
HEXFET Power MOSFET
-55 to + 150

'
Max.
± 8.0
0.01
-4.3
-3.4
-12
-34
1.3
0.8
33
Micro3™
R
Max.
DS(on)
V
100
DSS
= -12V
= 0.05Ω
05/13/10
Units
Units
W/°C
mJ
°C
V
A
V
1

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IRLML6401TRPBF Summary of contents

Page 1

... Lead-Free l Halogen-Free l These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150°C 10.0 1 -12V ...

Page 4

0V MHZ C iss = rss = C gd 1000 C oss = Ciss 800 600 400 Coss Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 0.8 0.7 0.6 0.5 0.4 0.3 -75 Fig ...

Page 7

0.15 [0.006 Micro3 (SOT-23/TO-236AB) Part Marking Information ‚‡r†)ÃUuv†Ãƒh…‡Ã€h…xvtÃvs‚…€h‡v‚Ãhƒƒyvr†Ã‡‚Ãqr‰vpr†Ãƒ…‚qˆprqÃhs‡r…Ã!!%! 96U@Ã8P9@ Q6SUÃIVH7@S 8ˆÃXDS@ C6GPB@Ià S@@ YÃ2ÃQ6SUÃIVH7@SÃ8P9@ÃS@ ...

Page 8

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, ...

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