IRLML6402TRPBF International Rectifier, IRLML6402TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML6402TRPBF
• Description: MOSFET P-CH 20V 3.7A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML6402TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 633pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 3.7A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: Micro
• Channel Type: P
• Current, Drain: –3.7 A
• Gate Charge, Total: 8 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 0.065 Ohm
• Resistance, Thermal, Junction To Case: 100 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 588 ns
• Time, Turn-on Delay: 350 ns
• Transconductance, Forward: 6 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 3.7 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6402PBFTR

4
1000
800
600
400
200
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
0.2
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
Coss
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
-V
T = 150 C
SD
0.4
J
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
0.6
10
0.8
f = 1 MHZ
T = 25 C
J
V
1.0
GS
SHORTED
°
= 0 V
100
1.2
100
0.1
10
10
8
6
4
2
0
1
0.1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
-3.7A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
°
G
3
, Drain-to-Source Voltage (V)
1
BY R
V
DS
6
DS(on)
=-10V
FOR TEST CIRCUIT
SEE FIGURE
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10
9
10us
100us
1ms
10ms
13
12
100