IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet
IRLML5203TRPBF
Manufacturer Part Number
IRLML5203TRPBF
Description
MOSFET P-CH 30V 3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRLML5203TRPBF
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
14nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.098Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
3A
Power Dissipation
1.25W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Current, Drain
-3 A
Gate Charge, Total
9.5 nC
Polarization
P-Channel
Resistance, Drain To Source On
98 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
88 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Continuous Drain Current
3A
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
165 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
36 000
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203TRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
Description
Thermal Resistance
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
@T
@T
T
P-Channel MOSFET
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -10V
@ -10V
TM
,
G 1
S
V
-30V
2
DSS
IRLML5203PbF
R
HEXFET Power MOSFET
DS(on)
165@V
-55 to + 150
98@V
3
Max.
Max.
D
100
1.25
0.80
-3.0
-2.4
± 20
-30
-24
10
GS
max (mW)
GS
= -10V
= -4.5V
Micro3
PD - 94895A
-3.0A
-2.6A
TM
mW/°C
I
Units
Units
°C/W
D
°C
V
A
V
11/8/04
1
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IRLML5203TRPBF Summary of contents
Page 1
... Low Gate Charge l Lead-Free l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
Page 3
RECOMMENDED FOOT PRINT 0.972 3X [.038] 0.95 [.0375] Micro3 (SOT-23/TO-236AB) Part Marking Information PART NUMBER PART NUMBER CODE REF ERENCE IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = ...
Page 4
TR FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...