IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet
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IRLML5203TRPBF
Specifications of IRLML5203TRPBF
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IRLML5203TRPBF Summary of contents
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... Lead-Free l Halogen-Free l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP -15V -10V -7.0V -5.5V -4.5V -4.0V 10 -3.5V BOTTOM -2.7V 1 -2.70V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...
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1MHz iss rss oss ds gd 600 C iss 400 200 C oss C rss 0 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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-3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...
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Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.001 75 100 125 150 0.010 0.100 1.000 10.000 ...
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TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, ...