IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet

IRLML5203TRPBF

Manufacturer Part Number

IRLML5203TRPBF

Description

MOSFET P-CH 30V 3A SOT-23

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRLML5203TRPBF.pdf (9 pages)

2.IRLML5203TRPBF.pdf (4 pages)

Specifications of IRLML5203TRPBF

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Mounting Type

Surface Mount

Power - Max

1.25W

Fet Type

MOSFET P-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

14nC @ 10V

Vgs(th) (max) @ Id

2.5V @ 250µA

Current - Continuous Drain (id) @ 25° C

Drain To Source Voltage (vdss)

30V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

98 mOhm @ 3A, 10V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.098Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Drain Current (max)

Power Dissipation

1.25W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

Micro

Current, Drain

-3 A

Gate Charge, Total

9.5 nC

Polarization

P-Channel

Resistance, Drain To Source On

98 Milliohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

88 ns

Time, Turn-on Delay

12 ns

Transconductance, Forward

3.1 S

Voltage, Breakdown, Drain To Source

-30 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±20 V

Continuous Drain Current

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

165 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Mounting Style

SMD/SMT

Gate Charge Qg

9.5 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLML5203TRPBF

Manufacturer:

Quantity:

36 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRLML5203TRPBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRLML5203TRPBF

Company:

H&T Electronics

Part Number:

IRLML5203TRPBF

Quantity:

2 500

Company:

H&T Electronics

Part Number:

IRLML5203TRPBF

Quantity:

8 980

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRLML5203TRPBF/H3J

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (190Kb)

Description

Thermal Resistance

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to

produce a HEXFET Power MOSFET with the industry's

smallest footprint. This package, dubbed the Micro3

is ideal for applications where printed circuit board

space is at a premium. The low profile (<1.1mm) of

the Micro3 allows it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards. The thermal resistance and

power dissipation are the best available.

www.irf.com

θJA

@ T

Ultra Low On-Resistance

Surface Mount

Available in Tape & Reel

Low Gate Charge

Lead-Free

Halogen-Free

P-Channel MOSFET

STG

= 70°C

= 25°C

= 70°C

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ -10V

-30V

DSS

IRLML5203PbF

HEXFET Power MOSFET

DS(on)

165@V

-55 to + 150

98@V

Max.

100

1.25

0.80

-3.0

-2.4

± 20

-30

-24

max (mW)

= -10V

= -4.5V

Micro3

PD - 94895B

-3.0A

-2.6A

05/13/10

mW/°C

Units

°C/W

°C

Related parts for IRLML5203TRPBF

IRLML5203TRPBF Summary of contents

Page 1

... Lead-Free l Halogen-Free l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet

IRLML5203TRPBF

Specifications of IRLML5203TRPBF

Available stocks

Related parts for IRLML5203TRPBF

IRLML5203TRPBF Summary of contents

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Page 3

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