IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 4
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IRLML5203TRPBF
Manufacturer Part Number
IRLML5203TRPBF
Description
MOSFET P-CH 30V 3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRLML5203TRPBF
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
14nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
3A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.098Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
3A
Power Dissipation
1.25W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
Micro
Current, Drain
-3 A
Gate Charge, Total
9.5 nC
Polarization
P-Channel
Resistance, Drain To Source On
98 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
88 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Continuous Drain Current
3A
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
165 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
36 000
Part Number:
IRLML5203TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203TRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
4
100
0.1
10
1
800
600
400
200
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
0.6
-V
SD
-V
DS
°
,Source-to-Drain Voltage (V)
0.8
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
C oss
C rss
C iss
=
=
=
=
J
1.0
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
10
1.2
f = 1MHz
gd ,
gd
1.4
C
ds
V
GS
SHORTED
1.6
= 0 V
1.8
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
-3.0A
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
1
BY R
DS(on)
8
V
V
DS
DS
=-24V
=-15V
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10
12
10us
100us
1ms
10ms
100
16