IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML5203TRPBF
• Description: MOSFET P-CH 30V 3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML5203TRPBF

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.098Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.25W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: Micro
• Current, Drain: -3 A
• Gate Charge, Total: 9.5 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 98 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 88 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 3.1 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current: 3A
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
100
0.1
10
1
800
600
400
200
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
0.6
-V
SD
-V
DS
°
,Source-to-Drain Voltage (V)
0.8
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
C oss
C rss
C iss
=
=
=
=
J
1.0
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
10
1.2
f = 1MHz
gd ,
gd
1.4
C
ds
V
GS
SHORTED
1.6
= 0 V
1.8
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0.1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I =
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
-3.0A
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
1
BY R
DS(on)
8
V
V
DS
DS
=-24V
=-15V
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10
12
10us
100us
1ms
10ms
100
16