IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLML5203TRPBF
• Description: MOSFET P-CH 30V 3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML5203TRPBF

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.098Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.25W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: Micro
• Current, Drain: -3 A
• Gate Charge, Total: 9.5 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 98 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 88 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 3.1 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current: 3A
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:

‚
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
2
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– 0.019 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
3.1
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
510
–––
9.5
2.3
1.6
17
12
12
18
88
52
71
43
–––
-2.5
-1.0
-5.0
100
–––
–––
–––
–––
–––
-1.2
–––
–––
–––
165
3.5
2.4
14
18
98
26
1.3
24
V/°C
mΩ
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -3.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V ‚
= -15V ‚
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.3A, V
= -1.3A
D
GS
GS
= -250µA
= -3.0A
= -3.0A ‚
= -2.6A ‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
S
D