IRF5806TRPBF International Rectifier, IRF5806TRPBF Datasheet
IRF5806TRPBF
Specifications of IRF5806TRPBF
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IRF5806TRPBF Summary of contents
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... Available in Tape & Reel l Low Gate Charge l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° T ...
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1MHz iss rss 800 oss iss 600 400 200 C oss C ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...
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Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 14a. Basic Gate Charge Waveform 6 Fig 13. Typical On-Resistance Vs. Drain Current Fig 14b. Gate Charge Test Circuit www.irf.com ...
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-250µA 0.5 0.4 0.3 0.2 -75 -50 - Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 75 100 125 150 Typical Power Vs. Time ...
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8 www.irf.com ...
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Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS I3443DV PART NUMBER WAFER LOT NUMBER CODE PART NUMBER CODE REFERENCE SI3443DV 3B = IRF5800 3C = IRF5850 3D ...