IRF5806TRPBF International Rectifier, IRF5806TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF5806TRPBF
• Description: MOSFET P-CH 20V 4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5806TRPBF

• Package / Case: Micro6™(TSOP-6)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 11.4nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 86mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: -1.2V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 86 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 4 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 13. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
Drain Current
Gate Voltage
Q
GQ
GQ
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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