IRFL024ZTRPBF International Rectifier, IRFL024ZTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFL024ZTRPBF
• Description: MOSFET N-CH 55V 5.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024ZTRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 57.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
GS
1K
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
(BR)DSS
DUT
L
15V
DRIVER
+
-
V DD
VCC
A
Fig 14. Threshold Voltage vs. Temperature
4.0
3.5
3.0
2.5
2.0
60
50
40
30
20
10
0
-75
25
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
-50
50
-25
T J , Temperature ( °C )
vs. Drain Current
I D = 250µA
0
75
25
50
100
TOP
BOTTOM 3.1A
75
www.irf.com
125
100
I D
0.77A
0.89A
125
150
150