IRFL024ZTRPBF International Rectifier, IRFL024ZTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRFL024ZTRPBF
• Description: MOSFET N-CH 55V 5.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024ZTRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 57.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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+
-
D.U.T
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Fig 17.
+
-
SD
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V