IRF9328PBF International Rectifier, IRF9328PBF Datasheet - Page 3

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IRF9328PBF

Manufacturer Part Number
IRF9328PBF
Description
MOSFET P-CH 30V 12A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9328PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1680pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
19.7 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 12 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9328PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
0.01
100
100
0.1
0.01
Fig 3. Typical Transfer Characteristics
10
100
0.1
Fig 1. Typical Output Characteristics
10
1
1
0.1
1
1.0
T J = 150°C
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
C oss
C rss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C iss
2.0
-2.5V
1
T J = 25°C
3.0
≤ 60μs PULSE WIDTH
Tj = 25°C
V DS = -10V
≤ 60μs PULSE WIDTH
f = 1 MHZ
10
4.0
10
TOP
BOTTOM
5.0
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
100
100
6.0
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
0.1
10
1.6
1.4
1.2
1.0
0.8
0.6
Fig 2. Typical Output Characteristics
1
14
12
10
8
6
4
2
0
0.1
-60 -40 -20 0
0
I D = -12A
V GS = -10V
I D = -9.6A
-V DS , Drain-to-Source Voltage (V)
8
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
-2.5V
1
16
V DS = -24V
V DS = -15V
V DS = -6.0V
20 40 60 80 100 120 140 160
≤ 60μs PULSE WIDTH
Tj = 150°C
24
10
TOP
BOTTOM
32
40
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
100
48
3

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