IRF9328PBF International Rectifier, IRF9328PBF Datasheet - Page 4

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IRF9328PBF

Manufacturer Part Number
IRF9328PBF
Description
MOSFET P-CH 30V 12A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9328PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1680pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
-10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
19.7 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 12 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9328PBF
Manufacturer:
IR
Quantity:
20 000
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
10
12
10
Fig 9. Maximum Drain Current vs.
1
8
6
4
2
0
0.001
0.2
0.01
25
100
0.1
10
1E-006
1
Ambient Temperature
-V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T A , Ambient Temperature (°C)
50
D = 0.50
0.4
T J = 150°C
0.20
0.10
0.02
0.05
0.01
1E-005
75
SINGLE PULSE
( THERMAL RESPONSE )
0.6
100
T J = 25°C
0.0001
V GS = 0V
0.8
125
t 1 , Rectangular Pulse Duration (sec)
0.001
1.0
150
0.01
Fig 10. Threshold Voltage vs. Temperature
1000
100
0.1
2.5
2.0
1.5
1.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
-75 -50 -25
T A = 25°C
Tj = 150°C
Single Pulse
0.1
-V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
1
10msec
DC
25
I D = -25μA
50
1msec
10
75 100 125 150
10
www.irf.com
100
100

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