IRLR024NPBF International Rectifier, IRLR024NPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR024NPBF
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 17 A
• Gate Charge, Total: 15 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 45 W
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 8.3 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
100
10
800
600
400
200
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175°C
Drain-to-Source Voltage
J
C
C
C
V
V
iss
oss
rss
SD
DS
0.8
, Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
1.2
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
1.6
SHORTED
V
GS
= 0V
2.0
100
A
A
1000
15
12
Fig 8. Maximum Safe Operating Area
100
9
6
3
0
10
1
0
I
1
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 11A
Gate-to-Source Voltage
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
4
DS
G
, Drain-to-Source Voltage (V)
8
BY R
V
V
DS
DS
10
DS(on)
= 44V
= 28V
FOR TEST CIRCUIT
12
SEE FIGURE 13
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16
10µs
100µs
1ms
10ms
100
20
A
A