IRLR024NPBF International Rectifier, IRLR024NPBF Datasheet - Page 7

• Manufacturer Part Number: IRLR024NPBF
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 17 A
• Gate Charge, Total: 15 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 45 W
• Resistance, Drain To Source On: 0.065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 7.1 ns
• Transconductance, Forward: 8.3 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
Voltage
Reverse
Recovery
Current
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D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
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P.W.
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DS
Waveform
Fig 14. For N-Channel
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
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•
•
•
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Diode Recovery
Current
dv/dt
Forward Drop
•
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di/dt
HEXFET
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V
I
SD
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