SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet

SI4435DYPBF

Manufacturer Part Number

SI4435DYPBF

Description

MOSFET P-CH 30V 8A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.SI4435DYTRPBF.pdf (8 pages)

2.SI4435DYPBF.pdf (5 pages)

Specifications of SI4435DYPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

2320pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Channel Type

Current, Drain

-8 A

Gate Charge, Total

40 nC

Package Type

SO-8

Polarization

P-Channel

Power Dissipation

2.5 W

Resistance, Drain To Source On

0.015 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

130 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

11 S

Voltage, Breakdown, Drain To Source

-30 V

Voltage, Drain To Source

-30 V

Voltage, Forward, Diode

-1.2 V

Voltage, Gate To Source

±20 V

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

35 mOhms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 8 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

31 ns

Gate Charge Qg

40 nC

Minimum Operating Temperature

- 55 C

Rise Time

17 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4435DYPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
Download datasheet (108Kb)

Thermal Resistance

These P-channel HEXFET

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance per

silicon area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering technique

Description

www.irf.com

θJA

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

STG

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Parameter

Power MOSFETs from

@ -10V

Top View

Si4435DYPbF

HEXFET Power MOSFET

-55 to + 150

Max.

0.02

-8.0

-6.4

± 20

-30

-50

2.5

1.6

SO-8

DS(on)

DSS

= 0.020Ω

= -30V

Units

W/°C

°C/W

°C

09/30/04

Related parts for SI4435DYPBF

SI4435DYPBF Summary of contents

Page 1

... Pulsed Drain Current 25°C Power Dissipation 70°C Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com Si4435DYPbF HEXFET Power MOSFET Top View Max. @ -10V GS @ -10V GS 0.02 - 150 Max. ƒ -30V DSS D ...

Page 2

... Si4435DYPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance Si4435DYPbF VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V -2.7V -2.70V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -8.0A ...

Page 4

... Si4435DYPbF 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° J ° 0.1 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 125 150 -50 -25 ° Fig 10. Typical Vgs(th) Variance Vs. Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 Si4435DYPbF Id = -250µ 100 125 150 Temperature ( °C ) Juction Temperature ...

Page 6

... Si4435DYPbF 0.10 0.08 0. -8.0A 0.04 0.02 0. GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0. Fig 13. Typical On-Resistance Vs. VGS= - 4.5V VGS = -10V Drain Current ( A ) Drain Current www.irf.com ...

Page 7

... L 7 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY CODE F7101 LOT CODE PART NUMBER Si4435DYPbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... Si4435DYPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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