SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet
![MOSFET P-CH 30V 8A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
SI4435DYPBF
Specifications of SI4435DYPBF
Available stocks
Related parts for SI4435DYPBF
SI4435DYPBF Summary of contents
Page 1
... Pulsed Drain Current 25°C Power Dissipation 70°C Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com Si4435DYPbF HEXFET Power MOSFET Top View Max. @ -10V GS @ -10V GS 0.02 - 150 Max. -30V DSS D ...
Page 2
... Si4435DYPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
Page 3
... Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance Si4435DYPbF VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V -2.7V -2.70V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -8.0A ...
Page 4
... Si4435DYPbF 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 C ° J ° 0.1 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
Page 5
... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 125 150 -50 -25 ° Fig 10. Typical Vgs(th) Variance Vs. Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 Si4435DYPbF Id = -250µ 100 125 150 Temperature ( °C ) Juction Temperature ...
Page 6
... Si4435DYPbF 0.10 0.08 0. -8.0A 0.04 0.02 0. GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0. Fig 13. Typical On-Resistance Vs. VGS= - 4.5V VGS = -10V Drain Current ( A ) Drain Current www.irf.com ...
Page 7
... L 7 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY CODE F7101 LOT CODE PART NUMBER Si4435DYPbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...
Page 8
... Si4435DYPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...