SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet - Page 6

• Manufacturer Part Number: SI4435DYPBF
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DYPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 40 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.015 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4435DYPbF
6
0.10
0.08
0.06
0.04
0.02
0.00
Fig 12. Typical On-Resistance Vs.
2
-V GS, Gate -to -Source Voltage ( V )
4
Gate Voltage
6
8
Id = -8.0A
10
12
14
16
0.10
0.08
0.06
0.04
0.02
0.00
Fig 13. Typical On-Resistance Vs.
0
10
-I D , Drain Current ( A )
Drain Current
VGS= - 4.5V
VGS = -10V
20
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30
40