IRLR8259PBF International Rectifier, IRLR8259PBF Datasheet - Page 3

• Manufacturer Part Number: IRLR8259PBF
• Description: MOSFET N-CH 25V 57A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8259PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 13V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 57A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 6.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 12.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 48 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
1
T J = 175°C
2.5V
V DS , Drain-to-Source Voltage (V)
2
V GS , Gate-to-Source Voltage (V)
3
T J = 25°C
1
4
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤ 60µs PULSE WIDTH
5
10
TOP
BOTTOM
6
7
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
8
1000
100
2.0
1.5
1.0
0.5
10
1
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 4. Normalized On-Resistance
0.1
Fig 2. Typical Output Characteristics
I D = 21A
V GS = 10V
2.5V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
1
≤ 60µs PULSE WIDTH
Tj = 175°C
10
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
100
3