IRLR8259PBF International Rectifier, IRLR8259PBF Datasheet - Page 4

• Manufacturer Part Number: IRLR8259PBF
• Description: MOSFET N-CH 25V 57A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8259PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 13V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 57A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 6.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 12.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 48 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
10000
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
C iss
C oss
C rss
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.5
T J = 25°C
f = 1 MHZ
1.0
10
V GS = 0V
1.5
100
2.0
1000
100
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 17A
Gate-to-Source Voltage
1
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1
3
V DS = 20V
V DS = 13V
1msec
4
100µsec
5
10
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6
7
100
8