IRLR9343PBF International Rectifier, IRLR9343PBF Datasheet

MOSFET P-CH 55V 20A DPAK

IRLR9343PBF

Manufacturer Part Number
IRLR9343PBF
Description
MOSFET P-CH 55V 20A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR9343TRPBF.pdf (11 pages)

Specifications of IRLR9343PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
105 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 50V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
170 mOhms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 20 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
9.5 ns
Gate Charge Qg
31 nC
Minimum Operating Temperature
- 40 C
Rise Time
24 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLR9343PBF
Features
l
l
l
l
l
l
l
l
l
Description
This Digital Audio HEXFET
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Notes  through ‰ are on page 10
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
Lead-Free
175°C Operating Junction Temperature for
Repetitive Avalanche Capability for Robustness and
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low R
Low Q
Low Q
Multiple Package Options
J
STG
Efficiency
Ruggedness
Reliability
DS
GS
D
D
Advanced Process Technology
θJC
θJA
θJA
@ T
@ T
@T
@T
C
C
C
C
= 25°C
= 100°C
DSON
g
rr
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
sw
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
Junction-to-Case
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
g
h
Parameter
Parameter
GS
GS
g
@ -10V
@ 10V
gj
V
R
R
Q
T
G
DS
J
DS(ON)
DS(ON)
g
max
typ.
typ. @ V
typ. @ V
S
D
Key Parameters
Typ.
–––
–––
–––
GS
GS
= -10V
= -4.5V
-40 to + 175
IRLU9343-701PbF
Refer to page 10 for package outline
Max.
0.53
IRLR9343
–––
-55
±20
-20
-14
-60
79
39
D-Pak
I-Pak Leadform 701
IRLR9343PbF
IRLU9343PbF
IRLU9343-701
Max.
110
1.9
50
150
175
-55
93
31
IRLU9343
I-Pak
Units
Units
W/°C
°C/W
°C
m
m
W
V
A
N
nC
12/07/04
°C
V
1

Related parts for IRLR9343PBF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IRLR/U230A
Part Number:
IRLR/U230A
Description:
Advanced Power MOSFET
Manufacturer:
FAIRCHILD [Fairchild Semiconductor]
Datasheet:
IRLRU230A.pdf (7 pages)
IRLR/U2703
Part Number:
IRLR/U2703
Description:
POWER MOSFET
Manufacturer:
IRF [International Rectifier]
Datasheet:
IRLRU2703.pdf (10 pages)
IRLR/U2705
Part Number:
IRLR/U2705
Description:
HEXFET POWER MOSFET
Manufacturer:
IRF [International Rectifier]
Datasheet:
IRLRU2705.pdf (10 pages)
IRLR/U2905
Part Number:
IRLR/U2905
Description:
HEXFET Power MOSFET
Manufacturer:
IRF [International Rectifier]
Datasheet:
IRLRU2905.pdf (10 pages)
IRLR/U3303
Part Number:
IRLR/U3303
Description:
Power MOSFET
Manufacturer:
IRF [International Rectifier]
Datasheet:
IRLRU3303.pdf (10 pages)
irlr110a
Part Number:
irlr110a
Description:
Irlr/u110a Advanced Power Mosfet
Manufacturer:
Fairchild Semiconductor
Datasheet:
IRLR110A.pdf (9 pages)
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)

IRLR9343PBF Summary of contents

Page 1

... Notes  through ‰ are on page 10 www.irf.com typ DS(ON) R typ DS(ON) Q typ max J G Parameter @ -10V GS @ 10V GS h Parameter IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Key Parameters - -10V -4.5V 150 175 °C D D-Pak I-Pak IRLR9343 IRLU9343 I-Pak Leadform 701 S IRLU9343-701 Refer to page 10 for package outline Max ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

TOP 10 BOTTOM 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 175°C 10.0 1.0 V ...

Page 4

175°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 100 25°C 0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16 D.U DRIVER -20V GS 0.01 Ω DUT 0 1K ...

Page 7

EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 ASSEMBLY LINE "A" Note: "P" embly line position indicates "Lead-Free" OR www.irf.com INT ERNAT IONAL RECT ...

Page 8

EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN THE AS SEMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-F ree" OR INT ERNAT IONAL ...

Page 9

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 10

Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 1.24mH 25Ω -14A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This only ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords