IRLR9343PBF International Rectifier, IRLR9343PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR9343PBF
• Description: MOSFET P-CH 55V 20A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR9343PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR9343PBF

Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Fig 12. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
140
120
100
80
60
40
20
0
0
4.0
25
1000
100
0.1
Starting T J , Junction Temperature (°C)
10
-V GS , Gate-to-Source Voltage (V)
1
1.0E-06
50
Duty Cycle = Single Pulse
6.0
TOP
BOTTOM 1% Duty Cycle
I D = -14A
75
0.01
0.05
0.10
100
Single Pulse
T J = 125°C
8.0
Fig 14. Typical Avalanche Current Vs.Pulsewidth
T J = 25°C
125
1.0E-05
I D = -14A
150
10.0
175
tav (sec)
1.0E-04
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 17a, 17b.
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 14, 15).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
500
400
300
200
100
D (ave)
0
25
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
Starting T J , Junction Temperature (°C)
1.0E-03
50
= P
D (ave)
jmax
pulsewidth,
75
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
100
thJC
tav
125
TOP
BOTTOM
1.0E-02
jmax
150
is
-5.5A
-4.0A
-14A
I D
5
175