IRF8734PBF International Rectifier, IRF8734PBF Datasheet

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IRF8734PBF

Manufacturer Part Number
IRF8734PBF
Description
MOSFET N-CH 30V 21A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8734PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
3175pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
21 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
20 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
l
l
Benefits
l
l
l
l
l
www.irf.com
Notes  through
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
100% Tested for R
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
at 4.5V V
G
Parameter
Parameter
GS
f
f
f
g
GS
GS
@ 10V
@ 10V
V
G
S
S
S
30V 3.5m @V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET
8
7
6
5
DS(on)
IRF8734PbF
Max.
0.02
± 20
168
2.5
1.6
30
21
17
D
D
D
D
A
A
GS
max
Max.
®
= 10V
20
50
Power MOSFET
SO-8
Qg (typ.)
PD - 96226
20nC
Units
Units
W/°C
°C/W
2/12/09
°C
W
V
A
1

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IRF8734PBF Summary of contents

Page 1

... See detailed ordering and shipping information on the last page of this data sheet. www.irf.com V DSS 30V 3. Top View @ 10V GS @ 10V Typ. g ––– f ––– 96226 IRF8734PbF ® HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 20nC SO-8 Max. Units 30 V ± 20 ...

Page 2

... IRF8734PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 2. Typical Output Characteristics 1 21A 10V 1.6 1.4 1.2 1.0 0.8 0.6 -60 -40 - 100 120 140 160 3.5 4 4.5 Fig 4. Normalized On-Resistance IRF8734PbF VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 2.3V ≤ 60µs PULSE WIDTH Tj = 150°C ...

Page 4

... IRF8734PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 150° 25°C 1 0.1 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 17A 12.0 10 ...

Page 5

... Fig 10. Threshold Voltage Vs. Temperature τ J τ J τ τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF8734PbF 50µ 100 125 150 Temperature ( ° (°C/W) τi (sec 9.66830 0.169346 3 4 τ C 16.3087 11.46293 τ τ 20.7805 1.815389 3 4 τ τ ...

Page 6

... IRF8734PbF 125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig 14a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 15a. Switching Time Test Circuit 6 1000 21A 900 800 700 600 500 400 300 200 ...

Page 7

... Fig 16b. Gate Charge Waveform Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied Voltage - Inductor Curent *** IRF8734PbF Vds Vgs(th) Qgodr Qgd Qgs2 Qgs1 P.W. Period D = Period *** V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode ...

Page 8

... IRF8734PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 9

... MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com (Dimensions are shown in milimeters (inches)) FEED DIRECTION IRF8734PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) 9 ...

Page 10

... IRF8734PbF Orderable part number IRF8734PbF IRF8734TRPbF † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Qualification standards can be found at International Rectifier’s web site † http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. †† ...

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