IRF8734PBF International Rectifier, IRF8734PBF Datasheet - Page 5

• Manufacturer Part Number: IRF8734PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8734PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3175pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
100
25
20
15
10
0.1
10
5
0
1E-006
1
Fig 9. Maximum Drain Current Vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Ambient Temperature
T A , Ambient Temperature (°C)
50
0.20
0.01
0.10
0.05
0.02
1E-005
75
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
100
0.001
125
t 1 , Rectangular Pulse Duration (sec)
150
τ
0.01
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Fig 10. Threshold Voltage Vs. Temperature
i/Ri
R
1
R
2.5
2.0
1.5
1.0
0.5
1
0.1
-75 -50 -25
τ
2
τ
R
2
2
R
2
R
τ
3
3
R
τ
1
3
3
T J , Temperature ( °C )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0
τ
IRF8734PbF
R
4
τ
4
R
4
4
25
τ
C
τ
10
Ri (°C/W) τi (sec)
9.66830
16.3087
20.7805
3.14828
50
75 100 125 150
I D = 50µA
100
0.169346
11.46293
1.815389
0.005835
5
1000