IRF7807VD2PBF International Rectifier, IRF7807VD2PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7807VD2PBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807VD2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7807VD2PbF
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Q
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
of the converter and therefore sees transitions be-
tween ground and V
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
Typical Mobile PC Application
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchro-
nous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
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For the synchronous MOSFET Q2, R
The drain of Q2 is connected to the switching node
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The performance of these new devices has been tested
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in
. As Q1 turns on and off there is
Vin=24V
Vin=14V
Vin=10V
Load current (A)
rr
Figure 3
both generate losses that
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ds(on)
oss
is an im-
and re-
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the MOSFET on, resulting in shoot-through current .
The ratio of Q
potential for Cdv/dt turn on.
machine readable format at www.irf.com.
Figure 2: Q
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Spice model for IRF7807V can be downloaded in
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oss
Characteristic
gd
/Q
2
gs1
must be minimized to reduce the
Load current (A)
Figure 4
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Vin=24V
Vin=14V
Vin=10V
www.irf.com
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